dual igbtmod? s-series module 800 amperes/1200 volts CM800DY-24S powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 3/11 rev. 0 description: powerex dual igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM800DY-24S is a 1200v (v ces ), 800 ampere dual igbtmod? power module. current rating v ces type amperes volts (x 50) cm 800 24 outline drawing and circuit diagram dimensions inches millimeters a 5.51 140.0 b 5.12 130.0 c 1.38+0.04/-0.02 35.0+1.0/-0.5 d 0.45 11.5 e 0.39 10.0 f 4.33 0.001 110.0 0.25 g 0.54 13.8 h 1.42 36.0 j 1.72 43.8 k 0.35 9.0 l 0.59 15.0 m 0.80 20.4 n 0.57 14.5 dimensions inches millimeters p 1.57 40.0 q 2.56 65.0 r 0.79 20.0 s 0.32 8.0 t 0.26 dia. 6.5 dia. u m8 metric m8 v m4 metric m4 w 0.43 11.1 x 1.02 26.0 y 0.29 7.3 z 0.16 4.0 aa 0.96+0.04/-0.02 24.5+1.0/-0.5 g2 e2 e1 g1 di2 di1 tr2 tr1 c1 e2 c2e1 a b f e m n p u nuts (3 places) v nuts (4 places) t (4 places) f n h j k d g r y w x x l x q e label b c2e1 e2 c1 g2 e2 e1 g1 c z s aa
CM800DY-24S dual igbtmod? s-series module 800 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 rev. 0 2 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol CM800DY-24S units maximum junction temperature t j(max) +175 c operating junction temperature t j(op) -40 ~ +150 c storage temperature t stg -40 ~ +125 c case temperature * 2 t c -40 ~ +125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (dc, t c = 117c) * 2, * 8 i c 790 amperes peak collector current (pulse, repetitive) * 3 i crm 1600 amperes total power dissipation (t c = 25c) * 2, * 4 p tot 5355 watts emitter current (fwdi current, t c = 25c) * 2, * 4, * 8 i e * 1 790 amperes peak emitter current (fwdi current, pulse, repetitive) * 3 i erm * 1 1600 amperes mounting torque, m8 main terminals C 95 in-lb mounting torque, m4 auxiliary terminals C 15 in-lb mounting torque, m6 mounting to heatsink C 40 in-lb creepage distance (terminal to terminal) d s C mm creepage distance (terminal to baseplate) d s C mm clearance (terminal to terminal) d a C mm clearance (terminal to baseplate) d a C mm weight C 1200 grams flatness of baseplate (on the centerline x, y) * 7 e c -100 ~ +100 m isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 min.) v iso 2500 volts *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) measured point is just under the chips. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *6 typical value is measured by using thermally conductive grease of = 0.9 w/(m ? k). *7 baseplate flatness measurement point is as in the following figure. *8 this module has 800a igbt and fwdi chips. this limitation is based on a package limitation. x bottom ? concave + convex ? concave + convex bottom bottom label side y
CM800DY-24S dual igbtmod? s-series module 800 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 rev. 0 3 static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v C C 0.5 a gate-emitter threshold voltage v ge(th) i c = 80ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 800a, v ge = 15v, t j = 25c * 5 C 1.95 2.40 volts (terminal) i c = 800a, v ge = 15v, t j = 125c * 5 C 2.25 C volts i c = 800a, v ge = 15v, t j = 150c * 5 C 2.35 C volts collector-emitter saturation voltage v ce(sat) i c = 800a, v ge = 15v, t j = 25c C 1.70 2.15 volts (chip) i c = 800a, v ge = 15v, t j = 125c C 1.90 C volts i c = 800a, v ge = 15v, t j = 150c C 1.95 C volts gate charge q g v cc = 600v, i c = 800a, v ge = 15v C 1868 C nc emitter-collector voltage v ec * 1 i e = 800a, v ge = 0v, t j = 25c * 5 C 1.85 2.30 volts (terminal) i e = 800a, v ge = 0v, t j = 125c * 5 C 1.85 C volts i e = 800a, v ge = 0v, t j = 150c * 5 C 1.85 C volts emitter-collector voltage v ec * 1 i e = 800a, v ge = 0v, t j = 25c C 1.70 2.15 volts (chip) i e = 800a, v ge = 0v, t j = 125c C 1.70 C volts i e = 800a, v ge = 0v, t j = 150c C 1.70 C volts dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 80.0 nf output capacitance c oes v ce = 10v, v ge = 0v C C 16.0 nf reverse transfer capacitance c res C C 1.32 nf turn-on delay time t d(on) v cc = 600v, i c = 800a, C C 800 ns rise time t r v ge = 15v, C C 200 ns turn-off delay time t d(off) r g = 0 w , C C 600 ns fall time t f inductive load C C 300 ns reverse recovery time t rr * 1 v cc = 600v, i e = 800a, v ge = 15v, C C 300 ns reverse recovery charge q rr * 1 r g = 0 w , inductive load C 42.8 C c turn-on switching energy (per pulse) e on v cc = 600v, i c = i e = 800a, C 107 C mj turn-off switching energy (per pulse) e off v ge = 15v, r g = 0 w , C 82 C mj reverse recovery energy (per pulse) e rr * 1 t j = 150c, inductive load C 71 C mj internal lead resistance r cc' + ee' main terminals-chip, C C 0.4 m w per switch, t c = 25c * 2 internal gate resistance r g per switch C 2.45 C w *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) measured point is just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise.
CM800DY-24S dual igbtmod? s-series module 800 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 rev. 0 4 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case * 2 r th(j-c) q per igbt C C 0.028 c/w thermal resistance, junction to case * 2 r th(j-c) r per fwdi C C 0.045 c/w contact thermal resistance * 2 r th(c-s) case to heatsink,per 1/2 module, C 0.015 C c/w thermal grease applied * 6 recommended operating conditions, t a = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units dc supply voltage v cc applied across c1-e2 C 600 850 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1/g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 0 C 5.1 w *2 case temperature (t c ) and heatsink temperature (t s ) measured point is just under the chips. *6 typical value is measured by using thermally conductive grease of = 0.9 w/(m ? k).
CM800DY-24S dual igbtmod? s-series module 800 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 rev. 0 5 collector current, i c , (amperes) output characteristics (typical) 1200 1600 400 0 800 collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 3.5 3.0 2.5 2.0 1.5 0.5 1.0 0 collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 8 6 4 2 0 10 1 10 2 10 3 free-wheel diode forward characteristics (typical) 10 4 emitter current, i e , (amperes) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 3 10 2 10 1 10 0 10 -1 collector-emitter voltage, v ce , (volts) 0 2 4 6 8 10 v ge = 20v 13.5 15 12 11 t j = 25 c 10 9 collector-current, i c , (amperes) 0 400 800 1200 1600 v ge = 15v t j = 25c t j = 125c t j = 150c gate-emitter voltage, v ge , (volts) 0 4 8 12 16 20 t j = 25c i c = 320a i c = 1600a i c = 800a 0 0.5 1.0 1.5 2.0 3.0 2.5 emitter-collector voltage, v ec , (volts) collector-emitter voltage, v ce , (volts) 10 -1 10 0 10 2 v ge = 0v f = 1mhz 10 1 c oes c res c ies collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, t d(on) , t r , t d(off) , t f , (ns) switching time vs. collector current (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, t d(on) , t r , t d(off) , t f , (ns) switching time vs. collector current (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 gate resistance, r g , (?) 10 3 10 -1 10 1 10 0 10 2 10 1 switching time, t d(on) , t r , t d(off) , t f , (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 800a t j = 125c inductive load t f 10 2 gate resistance, r g , (?) 10 4 10 0 10 1 10 3 10 2 10 1 switching time, t d(on) , t r , t d(off) , t f , (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 800a t j = 150c inductive load t f 10 2 v ge = 15v t j = 25c t j = 125c t j = 150c
CM800DY-24S dual igbtmod? s-series module 800 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 rev. 0 6 transient thermal impedance characteristics (igbt part) single pulse t c = 25c per unit base = r th( j-c) = 0.028c/w time, (s) normalized transient thermal impedance, z t h ( j-c) transient thermal impedance characteristics (fwdi part) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) time, (s) normalized transient thermal impedance, z t h ( j-c) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th( j-c) = 0.045c/w gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 500 1500 1000 15 10 5 0 3000 2500 2000 emitter current, i e , (amperes) reverse recovery time, t r r , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 10 2 10 1 10 0 reverse recovery current, i r r , (amperes) i c = 800a v cc = 600v collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , e rr , (mj/pulse) 10 3 10 1 10 2 10 2 10 1 10 3 switching loss vs. collector current (typical) v cc = 600v v ge = 15v i c = 800a t j = 125c inductive load gate resistance, r g , () switching energy, e on , e off , e rr , (mj/pulse) 10 3 10 -1 10 0 10 1 10 2 10 1 10 2 switching loss vs. gate resistance (typical) collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , e rr , (mj/pulse) 10 3 10 1 10 2 10 2 10 1 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load 10 3 switching loss vs. collector current (typical) e on e off e rr v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load e on e off e rr v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t rr i rr emitter current, i e , (amperes) reverse recovery time, t r r , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 10 2 10 1 10 0 reverse recovery current, i r r , (amperes) v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t rr i rr e on e off e rr v cc = 600v v ge = 15v i c = 800a t j = 150c inductive load gate resistance, r g , () switching energy, e on , e off , e rr , (mj/pulse) 10 3 10 -1 10 0 10 1 10 2 10 1 10 2 switching loss vs. gate resistance (typical) e on e off e rr
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